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TEM for strain-engineered devices: Dark-field inline holography for nanoscale strain mapping

MPS-Authors
http://pubman.mpdl.mpg.de/cone/persons/resource/persons75912

Özdöl,  V. B.
Stuttgart Center for Electron Microscopy, Max Planck Institute for Intelligent Systems, Max Planck Society;

http://pubman.mpdl.mpg.de/cone/persons/resource/persons76219

van Aken,  P. A.
Stuttgart Center for Electron Microscopy, Max Planck Institute for Intelligent Systems, Max Planck Society;

http://pubman.mpdl.mpg.de/cone/persons/resource/persons75691

Koch,  C. T.
Stuttgart Center for Electron Microscopy, Max Planck Institute for Intelligent Systems, Max Planck Society;
Institute for Experimental Physics, Ulm University;

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Citation

Özdöl, V. B., van Aken, P. A., & Koch, C. T. (2012). TEM for strain-engineered devices: Dark-field inline holography for nanoscale strain mapping. G.I.T. Imaging and Microscopy, 3, 18-20.


Cite as: http://hdl.handle.net/11858/00-001M-0000-000E-BB01-B
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