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Journal Article

Incipient chemical bond formation of Xe to a cationic silicon cluster: Vibrational spectroscopy and structure of the Si4Xe+ complex

MPS-Authors
http://pubman.mpdl.mpg.de/cone/persons/resource/persons21601

Harding,  Daniel J.
Molecular Physics, Fritz Haber Institute, Max Planck Society;

http://pubman.mpdl.mpg.de/cone/persons/resource/persons21506

Fielicke,  André
Molecular Physics, Fritz Haber Institute, Max Planck Society;

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Si4Xe_CPL.pdf
(Any fulltext), 244KB

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Citation

Savoca, M., Langer, J., Harding, D. J., Dopfer, O., & Fielicke, A. (2013). Incipient chemical bond formation of Xe to a cationic silicon cluster: Vibrational spectroscopy and structure of the Si4Xe+ complex. Chemical Physics Letters, 557, 49-52. doi:10.1016/j.cplett.2012.12.020.


Cite as: http://hdl.handle.net/11858/00-001M-0000-000E-95EB-2
Abstract
The size-selective vibrational spectrum of Si4Xe+ in the 240–500 cm-1 range has been recorded using infrared (IR) multiple photon dissociation spectroscopy. Comparison to linear IR absorption spectra of Si4+ and Si4Xe+ calculated using density functional theory including dispersion corrections reveals an important influence of the Xe ligand on the structure of the cluster, involving significant charge transfer and formation of an incipient chemical Si–Xe bond with De = 0.3 eV.