Incipient chemical bond formation of Xe to a cationic silicon cluster: 
Vibrational spectroscopy and structure of the Si4Xe+ complex

Savoca, Marco; Langer, Judith; Harding, Daniel J.; Dopfer, Otto; Fielicke, André

doi:10.1016/j.cplett.2012.12.020

Item

ITEM ACTIONSEXPORT

Add to Basket

Local TagsRelease HistoryDetailsSummary

Released

Journal Article

Incipient chemical bond formation of Xe to a cationic silicon cluster: Vibrational spectroscopy and structure of the Si₄Xe⁺ complex

MPS-Authors

/persons/resource/persons21601

Harding, Daniel J.
Molecular Physics, Fritz Haber Institute, Max Planck Society;

/persons/resource/persons21506

Fielicke, André
Molecular Physics, Fritz Haber Institute, Max Planck Society;

External Resource

No external resources are shared

Fulltext (restricted access)

There are currently no full texts shared for your IP range.

Fulltext (public)

Si4Xe_CPL.pdf
(Any fulltext), 244KB

Supplementary Material (public)

There is no public supplementary material available

Citation

Savoca, M., Langer, J., Harding, D. J., Dopfer, O., & Fielicke, A. (2013). Incipient chemical bond formation of Xe to a cationic silicon cluster: Vibrational spectroscopy and structure of the Si₄Xe⁺ complex. Chemical Physics Letters, 557, 49-52. doi:10.1016/j.cplett.2012.12.020.

Cite as: https://hdl.handle.net/11858/00-001M-0000-000E-95EB-2

Abstract

The size-selective vibrational spectrum of Si₄Xe⁺ in the 240–500 cm^-1 range has been recorded using infrared (IR) multiple photon dissociation spectroscopy. Comparison to linear IR absorption spectra of Si₄⁺ and Si₄Xe⁺ calculated using density functional theory including dispersion corrections reveals an important influence of the Xe ligand on the structure of the cluster, involving significant charge transfer and formation of an incipient chemical Si–Xe bond with De = 0.3 eV.