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Defect morphology and strain of CVD grown 3C-SiC layers: effect of the carbonization process

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http://pubman.mpdl.mpg.de/cone/persons/resource/persons75867

Morales,  F. M.
Former Dept. Microstructure Interfaces, Max Planck Institute for Intelligent Systems, Max Planck Society;

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Mendez, D., Aouni, A., Morales, F. M., Pacheco, F. J., Araujo, D., Bustarret, E., et al. (2005). Defect morphology and strain of CVD grown 3C-SiC layers: effect of the carbonization process. Physica Status Solidi A, 202(4), 561-565.


Cite as: http://hdl.handle.net/11858/00-001M-0000-0010-492D-A
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