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Conference Paper

EELS studies of the bandgap in GaN using monochromated electrons

MPS-Authors
http://pubman.mpdl.mpg.de/cone/persons/resource/persons75535

Gu,  L.
Stuttgart Center for Electron Microscopy, Max Planck Institute for Intelligent Systems, Max Planck Society;

http://pubman.mpdl.mpg.de/cone/persons/resource/persons76143

Srot,  V.
Stuttgart Center for Electron Microscopy, Max Planck Institute for Intelligent Systems, Max Planck Society;

http://pubman.mpdl.mpg.de/cone/persons/resource/persons76113

Sigle,  W.
Stuttgart Center for Electron Microscopy, Max Planck Institute for Intelligent Systems, Max Planck Society;

http://pubman.mpdl.mpg.de/cone/persons/resource/persons75691

Koch,  C. T.
Stuttgart Center for Electron Microscopy, Max Planck Institute for Intelligent Systems, Max Planck Society;

http://pubman.mpdl.mpg.de/cone/persons/resource/persons76016

Rühle,  M.
Emeriti and Others, Max Planck Institute for Intelligent Systems, Max Planck Society;

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Citation

Gu, L., Srot, V., Sigle, W., Koch, C. T., Scholz, F., Kirchner, C., et al. (2006). EELS studies of the bandgap in GaN using monochromated electrons. In Proceedings of the 16th International Microscopy Congress 2006 (pp. 1484-1484). International Federation of Societies in Microscopy.


Cite as: http://hdl.handle.net/11858/00-001M-0000-0010-47DF-8
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