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Controlled enhancement of the electron field-effect mobility of F16CuPc thin-film transistors by use of functionalized SiO2 substrates

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http://pubman.mpdl.mpg.de/cone/persons/resource/persons75397

de Oteyza,  D.
Dept. Metastable and Low-Dimensional Materials, Max Planck Institute for Intelligent Systems, Max Planck Society;

http://pubman.mpdl.mpg.de/cone/persons/resource/persons75252

Barrena,  E.
Dept. Metastable and Low-Dimensional Materials, Max Planck Institute for Intelligent Systems, Max Planck Society;

http://pubman.mpdl.mpg.de/cone/persons/resource/persons75415

Dosch,  H.
Dept. Metastable and Low-Dimensional Materials, Max Planck Institute for Intelligent Systems, Max Planck Society;
Universität Stuttgart, Institut für Theoretische und Angewandte Physik;

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de Oteyza, D., Barrena, E., Osso, J., Dosch, H., Meyer, S., & Pflaum, J. (2006). Controlled enhancement of the electron field-effect mobility of F16CuPc thin-film transistors by use of functionalized SiO2 substrates. Applied Physics Letter, 87: 183504.


Cite as: http://hdl.handle.net/11858/00-001M-0000-0010-4543-5
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