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Band-gap measurements of direct and indirect semiconductors using monochromated electrons

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Gu,  L.
Stuttgart Center for Electron Microscopy, Max Planck Institute for Intelligent Systems, Max Planck Society;

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Srot,  V.
Former Dept. Microstructure Interfaces, Max Planck Institute for Intelligent Systems, Max Planck Society;
Stuttgart Center for Electron Microscopy, Max Planck Institute for Intelligent Systems, Max Planck Society;

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Sigle,  W.
Former Dept. Microstructure Interfaces, Max Planck Institute for Intelligent Systems, Max Planck Society;
Stuttgart Center for Electron Microscopy, Max Planck Institute for Intelligent Systems, Max Planck Society;

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Koch,  C.
Former Dept. Microstructure Interfaces, Max Planck Institute for Intelligent Systems, Max Planck Society;
Stuttgart Center for Electron Microscopy, Max Planck Institute for Intelligent Systems, Max Planck Society;

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van Aken,  P. A.
Stuttgart Center for Electron Microscopy, Max Planck Institute for Intelligent Systems, Max Planck Society;

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Rühle,  M.
Emeriti and Others, Max Planck Institute for Intelligent Systems, Max Planck Society;

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Citation

Gu, L., Srot, V., Sigle, W., Koch, C., van Aken, P. A., Scholz, F., et al. (2007). Band-gap measurements of direct and indirect semiconductors using monochromated electrons. Physical Review B, 75: 195214.


Cite as: https://hdl.handle.net/11858/00-001M-0000-0010-43AF-5
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