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Transition from layer-by-layer to rapid roughening in the growth of DIP on SiO2

MPS-Authors
http://pubman.mpdl.mpg.de/cone/persons/resource/persons76326

Zhang,  X .N.
Dept. Metastable and Low-Dimensional Materials, Max Planck Institute for Intelligent Systems, Max Planck Society;

http://pubman.mpdl.mpg.de/cone/persons/resource/persons75252

Barrena,  E.
Dept. Metastable and Low-Dimensional Materials, Max Planck Institute for Intelligent Systems, Max Planck Society;

http://pubman.mpdl.mpg.de/cone/persons/resource/persons75397

de Oteyza,  D. G.
Dept. Metastable and Low-Dimensional Materials, Max Planck Institute for Intelligent Systems, Max Planck Society;

http://pubman.mpdl.mpg.de/cone/persons/resource/persons75415

Dosch,  H.
Dept. Metastable and Low-Dimensional Materials, Max Planck Institute for Intelligent Systems, Max Planck Society;
Universität Stuttgart, Institut für Theoretische und Angewandte Physik;

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Citation

Zhang, X.., Barrena, E., de Oteyza, D. G., & Dosch, H. (2007). Transition from layer-by-layer to rapid roughening in the growth of DIP on SiO2. Surface Science, 601, 2420-2425.


Cite as: http://hdl.handle.net/11858/00-001M-0000-0010-42C1-5
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