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The importance of grain boundaries for the time-dependent mobility degradation in organic thin-film transistors

MPS-Authors

Weitz,  R. T.
Max Planck Society;

Amsharov,  K.
Max Planck Society;

Zschieschang,  U.
Max Planck Society;

Burghard,  M.
Max Planck Society;

Jansen,  M.
Max Planck Society;

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Kelsch,  M.
Former Dept. Microstructure Interfaces, Max Planck Institute for Intelligent Systems, Max Planck Society;
Stuttgart Center for Electron Microscopy, Max Planck Institute for Intelligent Systems, Max Planck Society;

Rhamati,  B.
Max Planck Society;

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van Aken,  P. A.
Stuttgart Center for Electron Microscopy, Max Planck Institute for Intelligent Systems, Max Planck Society;

Kern,  K.
Max Planck Society;

Klauk,  H.
Max Planck Society;

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Citation

Weitz, R. T., Amsharov, K., Zschieschang, U., Burghard, M., Jansen, M., Kelsch, M., et al. (2009). The importance of grain boundaries for the time-dependent mobility degradation in organic thin-film transistors. Chemistry of Materials, 21(20), 4949-4954. doi:10.1021/cm902145x.


Cite as: https://hdl.handle.net/11858/00-001M-0000-0010-3C87-3
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