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Conference Paper

Strain mapping of 45 nm MOSFET by dark-field inline electron holography

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http://pubman.mpdl.mpg.de/cone/persons/resource/persons75912

Özdöl,  V. B.
Stuttgart Center for Electron Microscopy, Max Planck Institute for Intelligent Systems, Max Planck Society;

http://pubman.mpdl.mpg.de/cone/persons/resource/persons75691

Koch,  C. T.
Former Dept. Microstructure Interfaces, Max Planck Institute for Intelligent Systems, Max Planck Society;
Stuttgart Center for Electron Microscopy, Max Planck Institute for Intelligent Systems, Max Planck Society;

http://pubman.mpdl.mpg.de/cone/persons/resource/persons76219

van Aken,  P. A.
Stuttgart Center for Electron Microscopy, Max Planck Institute for Intelligent Systems, Max Planck Society;

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Citation

Özdöl, V. B., Koch, C. T., & van Aken, P. A. (2010). Strain mapping of 45 nm MOSFET by dark-field inline electron holography. Microscopy and Microanalysis, 16(Suppl. 2), 592-593.


Cite as: http://hdl.handle.net/11858/00-001M-0000-0010-3C13-7
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