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Conference Paper

The role of Si impurities in the transient dopant segregation and precipitation in yttrium-doped alumina

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Richter,  G.
Central Scientific Facility Thin Film Laboratory, Max Planck Institute for Intelligent Systems, Max Planck Society;

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Rühle,  M.
Dept. Metastable and Low-Dimensional Materials, Max Planck Institute for Intelligent Systems, Max Planck Society;

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Sturm, S., Gülgün, M. A., Richter, G., Morales, F. M., Cannon, R. M., & Rühle, M. (2010). The role of Si impurities in the transient dopant segregation and precipitation in yttrium-doped alumina. International Journal of Materials Research, 101, 95-101.


Cite as: https://hdl.handle.net/11858/00-001M-0000-0010-3B2D-A
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