Influence of cooling rate on the dislocations and related luminescence in LPE 
SiGe layers grown on Si (100) substrates

Sembian, A. M.; Banhart, F.; Konuma, M.; Weber, J.; Moorthy Babuc, S.; Ramasamyc, P.

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Influence of cooling rate on the dislocations and related luminescence in LPE SiGe layers grown on Si (100) substrates

MPS-Authors

Sembian, A. M.
Max Planck Society;

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Banhart, F.
Emeriti and Others, Max Planck Institute for Intelligent Systems, Max Planck Society;

Konuma, M.
Max Planck Society;

Weber, J.
Max Planck Society;

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Sembian, A. M., Banhart, F., Konuma, M., Weber, J., Moorthy Babuc, S., & Ramasamyc, P. (2000). Influence of cooling rate on the dislocations and related luminescence in LPE SiGe layers grown on Si (100) substrates. Thin Solid Films, 372, 1-5.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0010-3A01-1

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