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Relaxed SiGe buffer-layer growth with point defect injection

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http://pubman.mpdl.mpg.de/cone/persons/resource/persons75448

Ernst,  F.
Former Dept. Microstructure Interfaces, Max Planck Institute for Intelligent Systems, Max Planck Society;

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Lyutovich, K., Kasper, E., Ernst, F., Bauer, M., & Oehme, M. (2000). Relaxed SiGe buffer-layer growth with point defect injection. Materials Science and Engineering B, 71, 14-19.


Cite as: http://hdl.handle.net/11858/00-001M-0000-0010-37DB-F
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