Preparation and optical properties of Ge and C-induced Ge dots on Si

Eberl, K.; Schmidt, O. G.; Kienzle, O.; Ernst, F.

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Preparation and optical properties of Ge and C-induced Ge dots on Si

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Kienzle, O.
Former Dept. Microstructure Interfaces, Max Planck Institute for Intelligent Systems, Max Planck Society;

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Ernst, F.
Former Dept. Microstructure Interfaces, Max Planck Institute for Intelligent Systems, Max Planck Society;

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Eberl, K., Schmidt, O. G., Kienzle, O., & Ernst, F. (2000). Preparation and optical properties of Ge and C-induced Ge dots on Si. In S. Moss (Ed.), Semiconductor Quantum Dots (pp. 355-362). Warrendale, Pa.: MRS.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0010-378C-3

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