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Conference Paper

Diffusion of implanted 195Au radiotracer atoms in amorphous silicon under irradiation with 1 MeV-N+ ions

MPS-Authors
http://pubman.mpdl.mpg.de/cone/persons/resource/persons76244

Voss,  T.
Dept. Theory of Inhomogeneous Condensed Matter, Max Planck Institute for Intelligent Systems, Max Planck Society;

http://pubman.mpdl.mpg.de/cone/persons/resource/persons75471

Frank,  W.
Dept. Metastable and Low-Dimensional Materials, Max Planck Institute for Intelligent Systems, Max Planck Society;

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Voss, T., Scharwaechter, P., & Frank, W. (2001). Diffusion of implanted 195Au radiotracer atoms in amorphous silicon under irradiation with 1 MeV-N+ ions. In Y. Limoge (Ed.), Proceedings of DIMAT 2000, the Fifth International Conference on Diffusion in Materials (pp. 659-665). Uetikon-Zürich: Scitec Publications Ltd.


Cite as: http://hdl.handle.net/11858/00-001M-0000-0010-35E9-1
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