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Journal Article

Laterally ordered Ge/Si islands: a new concept for faster field effect transistors

MPS-Authors

Schmidt,  O. G.
Max Planck Society;

Denker,  U.
Max Planck Society;

http://pubman.mpdl.mpg.de/cone/persons/resource/persons75634

Jin-Phillipp,  N. Y.
Former Dept. Microstructure Interfaces, Max Planck Institute for Intelligent Systems, Max Planck Society;
Dept. Metastable and Low-Dimensional Materials, Max Planck Institute for Intelligent Systems, Max Planck Society;
Stuttgart Center for Electron Microscopy, Max Planck Institute for Intelligent Systems, Max Planck Society;

http://pubman.mpdl.mpg.de/cone/persons/resource/persons75448

Ernst,  F.
Former Dept. Microstructure Interfaces, Max Planck Institute for Intelligent Systems, Max Planck Society;

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Citation

Schmidt, O. G., Denker, U., Dashiell, M., Jin-Phillipp, N. Y., Eberl, K., Schreiner, R., et al. (2002). Laterally ordered Ge/Si islands: a new concept for faster field effect transistors. Materials Science and Engineering B, 89, 101-105.


Cite as: http://hdl.handle.net/11858/00-001M-0000-0010-32B0-A
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