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Conference Paper

Cracking of GaN Based III-Nitride Heterostructures Grown by MOVPE on (0001)-6H-SiC

MPS-Authors
http://pubman.mpdl.mpg.de/cone/persons/resource/persons75562

Hasenkopf,  A.
Former Dept. Microstructure Interfaces, Max Planck Institute for Intelligent Systems, Max Planck Society;

http://pubman.mpdl.mpg.de/cone/persons/resource/persons75946

Phillipp,  F.
Former Dept. Microstructure Interfaces, Max Planck Institute for Intelligent Systems, Max Planck Society;

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Citation

Hasenkopf, A., Scholz, F., & Phillipp, F. (2002). Cracking of GaN Based III-Nitride Heterostructures Grown by MOVPE on (0001)-6H-SiC.


Cite as: http://hdl.handle.net/11858/00-001M-0000-0010-329D-7
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