Cracking of GaN Based III-Nitride Heterostructures Grown by MOVPE on 
(0001)-6H-SiC

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Hasenkopf, A.
Former Dept. Microstructure Interfaces, Max Planck Institute for Intelligent Systems, Max Planck Society;

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Phillipp, F.
Former Dept. Microstructure Interfaces, Max Planck Institute for Intelligent Systems, Max Planck Society;

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Hasenkopf, A., Scholz, F., & Phillipp, F. (2002). Cracking of GaN Based III-Nitride Heterostructures Grown by MOVPE on (0001)-6H-SiC.

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