Application of the full-potential linear augmented-plane-wave method to the 
study of electronic properties in semiconductors with d valence electrons

Zaoui, A.; Hassan, F. E.

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Application of the full-potential linear augmented-plane-wave method to the study of electronic properties in semiconductors with d valence electrons

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Zaoui, A.
Former Dept. Microstructure Interfaces, Max Planck Institute for Intelligent Systems, Max Planck Society;

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Zaoui, A., & Hassan, F. E. (2002). Application of the full-potential linear augmented-plane-wave method to the study of electronic properties in semiconductors with d valence electrons. Philosophical Magazine B-Physics of Condensed Matter Statistical Mechanics Electronic Optical and Magnetic Properties, 82(7), 791-800.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0010-3110-B

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