Quantitative characterization of dislocation structure coupled with 
electromigration in a passivated Al(0.5wt% Cu) interconnect

Barabash, R. I.; Ice, G. E.; Tamura, N.; Valek, B. C.; Bravman, J. C.; Spolenak, R.; Patel, J. R.

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Quantitative characterization of dislocation structure coupled with electromigration in a passivated Al(0.5wt% Cu) interconnect

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Spolenak, R.
Former Dept. Micro/Nanomechanics of Thin Films and Biological Systems, Max Planck Institute for Intelligent Systems, Max Planck Society;

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Barabash, R. I., Ice, G. E., Tamura, N., Valek, B. C., Bravman, J. C., Spolenak, R., et al. (2003). Quantitative characterization of dislocation structure coupled with electromigration in a passivated Al(0.5wt% Cu) interconnect. In A. Kerrow, J. Lelu, O. Kraft, & T. Kikkawa (Eds.), Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics (pp. 107-114). Warrendale, Pa.: MRS.

Cite as: https://hdl.handle.net/11858/00-001M-0000-0010-2E06-7

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