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Growth and microstructural characterization of GaN films grown by laser induced reactive epitaxy

MPS-Authors

Zhou,  H.
Max Planck Society;

http://pubman.mpdl.mpg.de/cone/persons/resource/persons75946

Phillipp,  F.
Former Dept. Microstructure Interfaces, Max Planck Institute for Intelligent Systems, Max Planck Society;

http://pubman.mpdl.mpg.de/cone/persons/resource/persons76017

Rühm,  A.
Dept. Metastable and Low-Dimensional Materials, Max Planck Institute for Intelligent Systems, Max Planck Society;

http://pubman.mpdl.mpg.de/cone/persons/resource/persons76073

Schröder,  H.
Dept. Metastable and Low-Dimensional Materials, Max Planck Institute for Intelligent Systems, Max Planck Society;

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Citation

Zhou, H., Rupp, B., Phillipp, F., Henn, B., Gross, M., Rühm, A., et al. (2003). Growth and microstructural characterization of GaN films grown by laser induced reactive epitaxy. Journal of Applied Physics, 93, 1933-1940.


Cite as: http://hdl.handle.net/11858/00-001M-0000-0010-2D9B-0
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