Highly chiral-selective growth of single-walled carbon nanotubes with a simple 
monometallic Co catalyst

Fouquet, Martin; Bayer, Bernhard C.; Esconjauregui, Santiago; Blume, Raoul; Warner, J. H.; Hofmann, Stephan; Schlögl, Robert; Thomsen, C.; Robertson, John

doi:10.1103/PhysRevB.85.235411

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Highly chiral-selective growth of single-walled carbon nanotubes with a simple monometallic Co catalyst

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Schlögl, Robert
Inorganic Chemistry, Fritz Haber Institute, Max Planck Society;

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Citation

Fouquet, M., Bayer, B. C., Esconjauregui, S., Blume, R., Warner, J. H., Hofmann, S., et al. (2012). Highly chiral-selective growth of single-walled carbon nanotubes with a simple monometallic Co catalyst. Physical Review B, 85(23): 235411. doi:10.1103/PhysRevB.85.235411.

Cite as: https://hdl.handle.net/11858/00-001M-0000-000F-D2C0-B

Abstract

We report on the growth of single-walled carbon nanotubes from a monometallic Co catalyst on an oxidized Si wafer support by the most simple growth recipe (vacuum annealing, growth by undiluted C2H2). Nevertheless,
multiwavelength Raman spectroscopy and transmission electron spectroscopy show a remarkable selectivity for chiral indices and thus, e.g., high abundance with a single chirality representing 58% of all semiconducting tubes. In situ x-ray photoelectron spectroscopy monitors the catalyst chemistry during carbon nanotube growth and shows interfacial Co-Si interactions that may help to stabilize the nanoparticle/nanotube diameter. We outline a two-mechanism model explaining the selective growth.