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Role of nitrogen vacancies in the luminescence of Mg-doped GaN

MPG-Autoren
http://pubman.mpdl.mpg.de/cone/persons/resource/persons22064

Scheffler,  Matthias
Theory, Fritz Haber Institute, Max Planck Society;

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1.3699009.pdf
(Verlagsversion), 856KB

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Zitation

Yan, Q., Janotti, A., Scheffler, M., & Van de Walle, C. G. (2012). Role of nitrogen vacancies in the luminescence of Mg-doped GaN. Applied Physics Letters, 100(14): 142110. doi:10.1063/1.3699009.


Zitierlink: http://hdl.handle.net/11858/00-001M-0000-000F-C702-1
Zusammenfassung
Defects may cause compensation or act as recombination centers in Mg-doped GaN. Using hybrid functional calculations, we investigate the effects of nitrogen vacancies (VN) and Mg-vacancy complexes (MgGa-VN) on the electrical and optical properties of GaN. We find that MgGa-VN are compensating centers in p-type but electrically inactive in n-type GaN. They give rise to a broad emission at 1.8 eV, explaining the red luminescence that is frequently observed in Mg-doped GaN, regardless of the Fermi level. Nitrogen vacancies are also compensating centers in p-type GaN and likely contribute to the yellow luminescence that has been observed in Mg-doped GaN.