Interface state mapping in a Schottky barrier of the organic semiconductor 
terrylene

Stallinga, P.; Gomes, H. L.; Murgia, M.; Müllen, Klaus

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Interface state mapping in a Schottky barrier of the organic semiconductor terrylene

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Müllen, Klaus
MPI for Polymer Research, Max Planck Society;

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Stallinga, P., Gomes, H. L., Murgia, M., & Müllen, K. (2002). Interface state mapping in a Schottky barrier of the organic semiconductor terrylene. Organic Electronics, 3(1), 43-51.

Cite as: https://hdl.handle.net/11858/00-001M-0000-000F-6677-C

Abstract

In this work we quantitatively map interface states in energy in a Schottky barrier between aluminum and the vacuum sublimed organic semiconductor terrylene. The density map of these interface states was extracted from the, admittance spectroscopy data. They revealed an interface state density of 2 x 10(12). cm(-2)eV(-1) close to the valence band which decreases slightly towards midgap. Additional do measurements show that the semiconductor bulk activation energy is 0.33 eV which may correspond to an acceptor level. (C) 2002 Elsevier Science B.V. All rights reserved.