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Journal Article

Backside contacted field effect transistor array for extracellular signal recording

MPS-Authors
http://pubman.mpdl.mpg.de/cone/persons/resource/persons48080

Ingebrandt,  S.
MPI for Polymer Research, Max Planck Society;

http://pubman.mpdl.mpg.de/cone/persons/resource/persons49048

Yeung,  C. K.
MPI for Polymer Research, Max Planck Society;

http://pubman.mpdl.mpg.de/cone/persons/resource/persons48528

Offenhäusser,  Andreas
MPI for Polymer Research, Max Planck Society;

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Citation

Ingebrandt, S., Yeung, C. K., Staab, W., Zetterer, T., & Offenhäusser, A. (2003). Backside contacted field effect transistor array for extracellular signal recording. Biosensors & Bioelectronics, 18(4), 429-435.


Cite as: http://hdl.handle.net/11858/00-001M-0000-000F-6238-9
Abstract
A new approach to the design of field-effect transistor (FET) sensors and the use of these FETs in detecting extracellular electrophysiological recordings is reported. Backside contacts were engineered by deep reactive ion etching and a gas phase boron doping process of the holes using planar diffusion sources. The metal contacts were designed to fit on top of the bonding pads of a standard industrial 22-pin DIL (dual inline) chip carrier. To minimise contact resistance, the metal backside contacts of the chips were electroless plated with gold. The chips were mounted on top of the bonding pads using a standard flip-chip process and a fineplacer unit previously described. Rat embryonic myocytes were cultured on these new devices (effective growth area 6 x 6 mm2) in order to confirm their validity in electrophysiological recording. (C) 2003 Elsevier Science B.V. All rights reserved.