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Journal Article

Tuning the electronic structure of ultrathin crystalline silica films on Ru(0001)

MPS-Authors
http://pubman.mpdl.mpg.de/cone/persons/resource/persons21821

Loeffler,  Daniel
Chemical Physics, Fritz Haber Institute, Max Planck Society;

http://pubman.mpdl.mpg.de/cone/persons/resource/persons22185

Uhlrich,  John
Chemical Physics, Fritz Haber Institute, Max Planck Society;

http://pubman.mpdl.mpg.de/cone/persons/resource/persons22275

Yu,  Xin
Chemical Physics, Fritz Haber Institute, Max Planck Society;

http://pubman.mpdl.mpg.de/cone/persons/resource/persons22266

Yang,  Bing
Chemical Physics, Fritz Haber Institute, Max Planck Society;

http://pubman.mpdl.mpg.de/cone/persons/resource/persons21575

Groot,  Irene
Chemical Physics, Fritz Haber Institute, Max Planck Society;

http://pubman.mpdl.mpg.de/cone/persons/resource/persons22106

Shaikhutdinov,  Shamil K.
Chemical Physics, Fritz Haber Institute, Max Planck Society;

http://pubman.mpdl.mpg.de/cone/persons/resource/persons21524

Freund,  Hans-Joachim
Chemical Physics, Fritz Haber Institute, Max Planck Society;

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Fulltext (public)

e085403.pdf
(Publisher version), 755KB

Supplementary Material (public)
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Citation

Włodarczyk, R., Sierka, M., Sauer, J., Loeffler, D., Uhlrich, J., Yu, X., et al. (2012). Tuning the electronic structure of ultrathin crystalline silica films on Ru(0001). Physical Review B, 85(8): 085403. doi:10.1103/PhysRevB.85.085403.


Cite as: http://hdl.handle.net/11858/00-001M-0000-000F-4C90-2
Abstract
A combination of density functional theory calculations and photoelectron spectroscopy provides new insights into the atomistic picture of ultrathin silica films grown on Ru(0001). The silica film features a double-layer silicate sheet formed by corner-sharing [SiO4] tetrahedra and is weakly bound to the Ru(0001) substrate. This allows oxygen atoms to reversibly adsorb directly on the metal surface underneath the silica film. We demonstrate that the amount of adsorbed oxygen can be reversibly varied by vacuum annealing and oxidation, which in turn result in gradual changes of the silica/Ru electronic states. This finding opens the possibility for tuning the electronic properties of oxide/metal systems without altering the thickness or the structure of an oxide overlayer.