Effects of deep n-implants on the electrons' transport in silicon drift 
detectors

Castoldi, Andrea; Guazzoni, Chiara; Strüder, Lothar

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Effects of deep n-implants on the electrons' transport in silicon drift detectors

Castoldi, A., Guazzoni, C., & Strüder, L. (2002). Effects of deep n-implants on the electrons' transport in silicon drift detectors. IEEE Transactions on Nuclear Science, 49(3), 1055-1058.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0011-EA4D-B Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0011-EA4E-9

Genre: Journal Article

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Creators:
Castoldi, Andrea, Author
Guazzoni, Chiara, Author
Strüder, Lothar¹, Author

Affiliations:
1High Energy Astrophysics, MPI for Extraterrestrial Physics, Max Planck Society, ou_159890

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Dates: Date issued: 2002-06

Publication Status: Issued

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Rev. Type: Peer

Identifiers: eDoc: 15067

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Title: IEEE Transactions on Nuclear Science

Alternative Title : IEEE Trans. Nucl. Sci.

Source Genre: Journal

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Pages: - Volume / Issue: 49 (3) Sequence Number: - Start / End Page: 1055 - 1058 Identifier: -