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  Electronic properties of topological insulator candidate CaAgAs

Nayak, J., Kumar, N., Wu, S.-C., Shekhar, C., Fink, J., Rienks, E. D. L., et al. (2018). Electronic properties of topological insulator candidate CaAgAs. Journal of Physics: Condensed Matter, 30(4): 045501, pp. 1-5. doi:10.1088/1361-648X/aaa1cd.

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Nayak, Jayita1, Autor           
Kumar, Nitesh1, Autor           
Wu, Shu-Chun1, Autor           
Shekhar, Chandra2, Autor           
Fink, Jörg1, Autor           
Rienks, Emile D. L.3, Autor
Fecher, Gerhard H.4, Autor           
Sun, Yan1, Autor           
Felser, Claudia5, Autor           
Affiliations:
1Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863425              
2Chandra Shekhar, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863428              
3External Organizations, ou_persistent22              
4Gerhard Fecher, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863431              
5Claudia Felser, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863429              

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 Zusammenfassung: The topological phases of matter provide the opportunity to observe many exotic properties, such as the existence of 2D topological surface states in the form of Dirac cones in topological insulators and chiral transport through the open Fermi arc in Weyl semimetals. However, these properties affect the transport characteristics and, therefore, may be useful for applications only if the topological phenomena occur near the Fermi level. CaAgAs is a promising candidate for which the ab initio calculations predict line-nodes at the Fermi energy. However, the compound transforms into a topological insulator on considering spin-orbit interaction. In this study, we investigated the electronic structure of CaAgAs with angle-resolved photoemission spectroscopy (ARPES), ab initio calculations, and transport measurements. The results from ARPES show that the bulk valence band crosses the Fermi energy at the G-point. The measured band dispersion matches the ab initio calculations closely when shifting the Fermi energy in the calculations by -0.5 eV. The ARPES results are in good agreement with transport measurements, which show abundant p-type carriers.

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Sprache(n): eng - English
 Datum: 2018-01-042018-01-04
 Publikationsstatus: Erschienen
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 Art der Begutachtung: -
 Identifikatoren: DOI: 10.1088/1361-648X/aaa1cd
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Titel: Journal of Physics: Condensed Matter
Genre der Quelle: Zeitschrift
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Ort, Verlag, Ausgabe: Bristol : IOP Publishing
Seiten: - Band / Heft: 30 (4) Artikelnummer: 045501 Start- / Endseite: 1 - 5 Identifikator: ISSN: 0953-8984
CoNE: https://pure.mpg.de/cone/journals/resource/954928562478