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  Stress originating from nanovoids in hydrogenated amorphous semiconductors

Wang, Z., Flötotto, D., & Mittemeijer, E. J. (2017). Stress originating from nanovoids in hydrogenated amorphous semiconductors. Journal of Applied Physics, 121(9): 095307. doi:10.1063/1.4977853.

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 Creators:
Wang, Zumin1, 2, Author           
Flötotto, David2, 3, Author           
Mittemeijer, Eric Jan2, 4, Author           
Affiliations:
1School of Materials Science and Engineering, Tianjin University , 300350 Tianjin, China, ou_persistent22              
2Emeriti and Others, Max Planck Institute for Intelligent Systems, Max Planck Society, ou_1497650              
3Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, 104 South Goodwin Avenue, Urbana, Illinois 61801-2902, USA, ou_persistent22              
4Institute for Materials Science, University of Stuttgart, Heisenbergstrasse 3, D-70569 Stuttgart, Germany, ou_persistent22              

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Free keywords: Emeriti and Others
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Language(s): eng - English
 Dates: 2017-03-062017
 Publication Status: Issued
 Pages: 6
 Publishing info: -
 Table of Contents: -
 Rev. Type: -
 Identifiers: DOI: 10.1063/1.4977853
 Degree: -

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Title: Journal of Applied Physics
  Abbreviation : J. Appl. Phys.
Source Genre: Journal
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Publ. Info: New York, NY : AIP Publishing
Pages: - Volume / Issue: 121 (9) Sequence Number: 095307 Start / End Page: - Identifier: ISSN: 0021-8979
CoNE: https://pure.mpg.de/cone/journals/resource/991042723401880