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  Enhancing Thermoelectric Performance of TiNiSn Half-Heusler Compounds via Modulation Doping

Berry, T., Fu, C., Auffermann, G., Fecher, G. H., Schnelle, W., Serrano-Sanchez, F., et al. (2017). Enhancing Thermoelectric Performance of TiNiSn Half-Heusler Compounds via Modulation Doping. Chemistry of Materials, 29(16), 7042-7048. doi:10.1021/acs.chemmater.7b02685.

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Item Permalink: http://hdl.handle.net/11858/00-001M-0000-002D-F1FC-3 Version Permalink: http://hdl.handle.net/11858/00-001M-0000-002D-F21A-2
Genre: Journal Article

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 Creators:
Berry, Tanya1, Author              
Fu, Chenguang1, Author              
Auffermann, Gudrun2, Author              
Fecher, Gerhard H.3, Author              
Schnelle, Walter4, Author              
Serrano-Sanchez, Federico1, Author              
Yue, Yuan5, Author
Liang, Hong5, Author
Felser, Claudia6, Author              
Affiliations:
1Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, escidoc:1863425              
2Gudrun Auffermann, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, escidoc:1863432              
3Gerhard Fecher, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, escidoc:1863431              
4Walter Schnelle, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, escidoc:1863441              
5External Organizations, escidoc:persistent22              
6Claudia Felser, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, escidoc:1863429              

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 Abstract: MNiSn (M = Ti, Zr, and Hf) half-Heusler (HH) compounds are widely studied n-type thermoelectric (TE) materials for power generation. Most studies focus on Zr- and Hf-based compounds due to their high thermoelectric performance. However, these kinds of compositions are not cost-effective. Herein, the least expensive alloy in this half-Heusler family-TiNiSn-is investigated. Modulation doping of half-metallic MnNiSb in the TiNiSn system is realized by using spark plasma sintering. It is found that MnNiSb dissolves into the TiNiSn matrix and forms a heavily doped Ti1-xMnxNiSn1-xSbx phase, which leads to largely enhanced carrier concentration and also slight increase of carrier mobility. As a result, the electrical conductivity and power factor of the modulation doped compounds are greatly improved. A maximum power factor of 45 X 10(-4) W K-2 m(-1) is obtained at 750 K for the modulation doping system (TiNiSn)(1-x) + (MnNiSb)(x) with x = 0.05, which is one of the highest reported values in literature for TiNiSn systems. Furthermore, the lattice thermal conductivity is also suppressed due to the enhanced phonon scattering. Beneficial from the improved power factor and suppressed lattice thermal conductivity, a peak zT of 0.63 is obtained at 823 K for x = 0.05, which is an similar to 70% increase compared to the peak zT of TiNiSn. These results highlight the potential application of inexpensive TiNiSn-based TE materials and the effectiveness of modulation doping in enhancing the TE performance of HH compounds.

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Language(s): eng - English
 Dates: 2017-07-312017-07-31
 Publication Status: Published in print
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Title: Chemistry of Materials
  Abbreviation : Chem. Mater.
Source Genre: Journal
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Publ. Info: Washington, D.C. : American Chemical Society
Pages: - Volume / Issue: 29 (16) Sequence Number: - Start / End Page: 7042 - 7048 Identifier: ISSN: 0897-4756
CoNE: http://pubman.mpdl.mpg.de/cone/journals/resource/954925561571