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  Large out-of-plane and linear in-plane magnetoresistance in layered hafnium pentatelluride

Kumar, N., Shekhar, C., Wang, M., Chen, Y., Borrmann, H., & Felser, C. (2017). Large out-of-plane and linear in-plane magnetoresistance in layered hafnium pentatelluride. Physical Review B, 95(15): 155128, pp. 1-7. doi:10.1103/PhysRevB.95.155128.

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Kumar, Nitesh1, Autor           
Shekhar, Chandra2, Autor           
Wang, Meixiao3, Autor
Chen, Yulin3, Autor
Borrmann, Horst4, Autor           
Felser, Claudia5, Autor           
Affiliations:
1Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863425              
2Chandra Shekhar, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863428              
3External Organizations, ou_persistent22              
4Horst Borrmann, Chemical Metal Science, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863410              
5Claudia Felser, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863429              

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 Zusammenfassung: The prediction of the quantum spin Hall effect in two-dimensional ZrTe5 and HfTe5 monolayers has generated considerable recent interest in these materials. In addition, Dirac points and chiral-anomaly-induced negative longitudinal magnetoresistance (MR) have been observed in ZrTe5. Herein, we study the transport behavior of HfTe5 single crystals in detail and find a large (0.9 x 10(4)%) out-of-plane transverse MR, which is among the highest for layered materials reported thus far. We also encounter a large linear in-plane transverse (magnetic field parallel to c, current parallel to a) MR and discuss its possible origin. The mass anisotropy (gamma = 5.4 at 125 K) obtained by scaling angle-dependent MR data is consistent with the HfTe5 elliptical Fermi surface.

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Sprache(n): eng - English
 Datum: 2017-04-172017-04-17
 Publikationsstatus: Erschienen
 Seiten: -
 Ort, Verlag, Ausgabe: -
 Inhaltsverzeichnis: -
 Art der Begutachtung: -
 Identifikatoren: ISI: 000399794900005
DOI: 10.1103/PhysRevB.95.155128
 Art des Abschluß: -

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Titel: Physical Review B
  Kurztitel : Phys. Rev. B
Genre der Quelle: Zeitschrift
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Ort, Verlag, Ausgabe: Woodbury, NY : American Physical Society
Seiten: - Band / Heft: 95 (15) Artikelnummer: 155128 Start- / Endseite: 1 - 7 Identifikator: ISSN: 1098-0121
CoNE: https://pure.mpg.de/cone/journals/resource/954925225008