Growth and characterizationof large weak topological insulator Bi2Tel single 
crystal by Bismuth self-flux method

Ryu, G.; Son, K.; Schütz, G.

doi:10.1016/j.jcrysgro.2016.01.018

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Growth and characterizationof large weak topological insulator Bi₂Tel single crystal by Bismuth self-flux method

Ryu, G., Son, K., & Schütz, G. (2016). Growth and characterizationof large weak topological insulator Bi₂Tel single crystal by Bismuth self-flux method. Journal of Crystal Growth, 440, 26-30. doi:10.1016/j.jcrysgro.2016.01.018.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-002B-0A2D-9 Version Permalink: https://hdl.handle.net/11858/00-001M-0000-002B-0A2E-7

Genre: Journal Article

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Creators:
Ryu, G.¹, Author
Son, K.², Author
Schütz, G.², Author

Affiliations:
1Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569 Stuttgart, Germany, ou_persistent22
2Dept. Modern Magnetic Systems, Max Planck Institute for Intelligent Systems, Max Planck Society, ou_1497648

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Free keywords: Abt. Schütz

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Language(s): eng - English

Dates: Published Online: 2016Date issued: 2016

Publication Status: Issued

Pages: 5

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Rev. Type: Peer

Identifiers: DOI: 10.1016/j.jcrysgro.2016.01.018

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Title: Journal of Crystal Growth

Source Genre: Journal

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Publ. Info: Amsterdam : North-Holland

Pages: - Volume / Issue: 440 Sequence Number: - Start / End Page: 26 - 30 Identifier: ISSN: 0022-0248
CoNE: https://pure.mpg.de/cone/journals/resource/954925412860