hide
Free keywords:
-
Abstract:
Epitaxial thin films of Mn2RhSn were grown on a MgO(0 0 1) substrate by
magnetron co-sputtering of the constituents. An optimised range of
temperature for heat treatment was used to stabilise the tetragonal
structure and to prevent the capping Rh layer from diffusing into the
Heusler layer. Electronic and magnetic properties were analysed by hard
x-ray photoelectron spectroscopy as well as field- and
temperature-dependent Hall and resistivity measurements. The measured
valence spectra are in good agreement with the calculated density of
states. The measured saturation magnetisation corresponds to a magnetic
moment of 1 mu(B) in the primitive cell. The magnetisation measurements
revealed an out-of-plane anisotropy energy of 89 kJ m(-3) and a maximum
energy product of 3.3 kJ m(-3). The magnetoresistance ratio is 2% for
fields of 9 T. The lattice parameter of the compound has a very small
mismatch with MgO, which makes it promising for coherent electron
tunnelling phenomena.
