Self-organized and self-catalyst growth of semiconductor and metal wires by 
vapour phase epitaxy: GaN rods versus Cu whiskers

Eymery, J.; Chen, Xiaojun; Durand, Christophe; Kolb, Matthias; Richter, Gunther

doi:10.1016/j.crhy.2012.10.009

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Self-organized and self-catalyst growth of semiconductor and metal wires by vapour phase epitaxy: GaN rods versus Cu whiskers

Eymery, J., Chen, X., Durand, C., Kolb, M., & Richter, G. (2013). Self-organized and self-catalyst growth of semiconductor and metal wires by vapour phase epitaxy: GaN rods versus Cu whiskers. Comptes Rendus Physique, 14(2-3), 221-227. doi:10.1016/j.crhy.2012.10.009.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0018-E6B9-9 Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0023-CC8D-4

Genre: Journal Article

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Creators:
Eymery, J.¹, Author
Chen, Xiaojun¹, Author
Durand, Christophe¹, Author
Kolb, Matthias², Author
Richter, Gunther², Author

Affiliations:
1Équipe mixte CEA–CNRS–UJF “Nanophysique et semiconducteurs”, SP2M, UMR-E CEA/UJF-Grenoble 1, INAC, 38054 Grenoble, France, ou_persistent22
2Central Scientific Facility Thin Film Laboratory, Max Planck Institute for Intelligent Systems, Max Planck Society, ou_1497640

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Free keywords: ZWE Dünnschichtlabor; Abt. Spatz;

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Language(s): eng - English

Dates: Published Online: 2013-02-19Date issued: 2013

Publication Status: Issued

Pages: 7

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Rev. Type: Peer

Identifiers: DOI: 10.1016/j.crhy.2012.10.009

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Title: Comptes Rendus Physique

Source Genre: Journal

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Publ. Info: Elsevier Masson SAS

Pages: - Volume / Issue: 14 (2-3) Sequence Number: - Start / End Page: 221 - 227 Identifier: -