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  Doped semiconductors as half-metallic materials: Experiments and first-principles calculations of CoTi1-xMxSb (M = Sc, V, Cr, Mn, Fe)

Balke, B., Fecher, G. H., Gloskovskii, A., Barth, J., Kroth, K., Felser, C., et al. (2008). Doped semiconductors as half-metallic materials: Experiments and first-principles calculations of CoTi1-xMxSb (M = Sc, V, Cr, Mn, Fe). Physical Review B, 77(4): 045209, pp. 1-11. doi:10.1103/PhysRevB.77.045209.

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 Urheber:
Balke, Benjamin1, Autor
Fecher, Gerhard H., Autor
Gloskovskii, Andrei1, Autor
Barth, Joachim1, Autor
Kroth, Kristian1, Autor
Felser, Claudia2, Autor           
Robert, Rosa1, Autor
Weidenkaff, Anke1, Autor
Affiliations:
1external, ou_persistent22              
2External Organizations, ou_persistent22              

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 Zusammenfassung: This work reports experiments and first-principles calculations on the substitutional semiconducting C1(b) compound CoTi1-xMxSb. Diluted magnetic semiconductors have been prepared by substituting titanium in the semiconducting compound CoTiSb by other 3d transition elements M. Self-consistent calculations of the electronic structure predict some of the materials to be half-metallic ferromagnets. The structural, electronic, electric, and magnetic properties of the pure and substituted materials have been investigated. It is found from the experiments that substitution of up to 10% Ti by Fe, Mn, Cr, and V does not affect the crystalline structure and the lattice mismatch is less than 0.5% in the substituted compounds. The electric properties can be tuned from semiconducting to metallic by using different dopants. The M=Cr-doped compound exhibits a metal to semiconductor transition. Photoemission spectroscopy and conductivity measurements agree well with the calculated electronic structure. The measured Curie temperature of the Fe-substituted alloy is far above room temperature (>700 K). This fact and the very low lattice mismatch between the substituted and the pure compound make this material a serious candidate for future electronic applications, in particular for magnetoelectronics and spintronics.

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 Datum: 2008-01-01
 Publikationsstatus: Erschienen
 Seiten: -
 Ort, Verlag, Ausgabe: -
 Inhaltsverzeichnis: -
 Art der Begutachtung: -
 Identifikatoren: ISI: 000252863100066
DOI: 10.1103/PhysRevB.77.045209
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Titel: Physical Review B
  Andere : Phys. Rev. B
Genre der Quelle: Zeitschrift
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Ort, Verlag, Ausgabe: Woodbury, NY : American Physical Society
Seiten: - Band / Heft: 77 (4) Artikelnummer: 045209 Start- / Endseite: 1 - 11 Identifikator: ISSN: 1098-0121
CoNE: https://pure.mpg.de/cone/journals/resource/954925225008