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  Electronic structure and optical, mechanical, and transport properties of the pure, electron-doped, and hole-doped Heusler compound CoTiSb

Ouardi, S., Fecher, G. H., Felser, C., Schwall, M., Naghavi, S. S., Gloskovskii, A., et al. (2012). Electronic structure and optical, mechanical, and transport properties of the pure, electron-doped, and hole-doped Heusler compound CoTiSb. Physical Review B, 86(4): 045116, pp. 045116-1-045116-13. doi:10.1103/PhysRevB.86.045116.

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 Creators:
Ouardi, S.1, Author           
Fecher, G. H.2, Author           
Felser, C.3, Author           
Schwall, M., Author
Naghavi, S. S., Author
Gloskovskii, A., Author
Balke, B., Author
Hamrle, J., Author
Postava, K., Author
Pistora, J., Author
Ueda, S., Author
Kobayashi, K., Author
Affiliations:
1Siham Ouardi, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863439              
2Gerhard Fecher, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863431              
3Claudia Felser, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863429              

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Language(s): eng - English
 Dates: 2012-07-16
 Publication Status: Issued
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Type: -
 Identifiers: eDoc: 611284
DOI: 10.1103/PhysRevB.86.045116
 Degree: -

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Title: Physical Review B
Source Genre: Journal
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Pages: - Volume / Issue: 86 (4) Sequence Number: 045116 Start / End Page: 045116-1 - 045116-13 Identifier: ISSN: 1098-0121