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  Confined and chemically flexible grain boundaries in polycrystalline compound semiconductors

Abou-Ras, D., Schmidt, S. S., Caballero, R., Unold, T., Schock, H.-W., Koch, C. T., et al. (2012). Confined and chemically flexible grain boundaries in polycrystalline compound semiconductors. Advanced Energy Materials, 2(8), 992-998. doi:10.1002/aenm.201100764.

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 Creators:
Abou-Ras, Daniel1, Author
Schmidt, Sebastian S.1, Author
Caballero, Raquel1, 2, Author
Unold, Thomas1, Author
Schock, Hans-Werner3, Author
Koch, Christoph T.4, Author           
Schaffer, Bernhard5, 6, Author
Schaffer, Miroslava5, 7, Author
Choi, Pyuck-Pa8, Author
Cojocaru-Miredin, Oana8, Author
Affiliations:
1Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, 14109 Berlin, Germany, ou_persistent22              
2Universidad Autónoma de Madrid, Departamento de Física Aplicada, C/Francisco Tomás y Valiente 7, 28049 Madrid, Spain, ou_persistent22              
3Department of Engineering, George Holt Building, Ashton Street, Liverpool, L69 3BX, UK, ou_persistent22              
4Stuttgart Center for Electron Microscopy, Max Planck Institute for Intelligent Systems, Max Planck Society, ou_1497669              
5SuperSTEM, STFC Daresbury Laboratories , Keckwick Lane, Warrington, WA4 4AD, UK, ou_persistent22              
6Keckwick Lane, Warrington, WA4 4AD, UK, ou_persistent22              
7Department of Engineering, George Holt Building, Ashton Street, Liverpool, L69 3BX, UK, ou_persistent22              
8Max-Planck-Institut für Eisenforschung GmbH, Department of Microstructure Physics and Alloy Design, Max-Planck-Strasse 1, 40237 Düsseldorf, Germany, ou_persistent22              

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Free keywords: Stuttgart Center for Electron Microscopy
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Language(s): eng - English
 Dates: 2012-05-102012
 Publication Status: Issued
 Pages: 7
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: DOI: 10.1002/aenm.201100764
 Degree: -

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Title: Advanced Energy Materials
Source Genre: Journal
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Pages: - Volume / Issue: 2 (8) Sequence Number: - Start / End Page: 992 - 998 Identifier: ISSN: 1614-6832