Control of bonding and epitaxy at copper/sapphire interface

Oh, S. H.; Scheu, C.; Wagner, T.; Rühle, M.

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Control of bonding and epitaxy at copper/sapphire interface

Oh, S. H., Scheu, C., Wagner, T., & Rühle, M. (2007). Control of bonding and epitaxy at copper/sapphire interface. Applied Physics Letters, 91, 141912-141914.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0010-422A-A Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0010-422B-8

Genre: Journal Article

Alternative Title : Appl. Phys. Lett.

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Creators:
Oh, S. H., Author
Scheu, C., Author
Wagner, T.¹, Author
Rühle, M.², Author

Affiliations:
1Central Scientific Facility Thin Film Laboratory, Max Planck Institute for Intelligent Systems, Max Planck Society, ou_1497640
2Emeriti and Others, Max Planck Institute for Intelligent Systems, Max Planck Society, DE, ou_1497650

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Free keywords: MPI für Metallforschung; MPI für Festkörperforschung; Emeriti and Others;

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Language(s): eng - English

Dates: Date issued: 2007-10-03

Publication Status: Issued

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Rev. Type: Peer

Identifiers: eDoc: 320804

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Title: Applied Physics Letters

Alternative Title : Appl. Phys. Lett.

Source Genre: Journal

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Pages: - Volume / Issue: 91 Sequence Number: - Start / End Page: 141912 - 141914 Identifier: -