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  The importance of grain boundaries for the time-dependent mobility degradation in organic thin-film transistors

Weitz, R. T., Amsharov, K., Zschieschang, U., Burghard, M., Jansen, M., Kelsch, M., et al. (2009). The importance of grain boundaries for the time-dependent mobility degradation in organic thin-film transistors. Chemistry of Materials, 21(20), 4949-4954. doi:10.1021/cm902145x.

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 Creators:
Weitz, R. T.1, Author
Amsharov, K.1, Author
Zschieschang, U.1, Author
Burghard, M.1, Author
Jansen, M.1, Author
Kelsch, M.2, 3, Author           
Rhamati, B.1, Author
van Aken, P. A.3, Author           
Kern, K.1, Author
Klauk, H.1, Author
Affiliations:
1Max Planck Society, ou_persistent13              
2Former Dept. Microstructure Interfaces, Max Planck Institute for Intelligent Systems, Max Planck Society, ou_1497657              
3Stuttgart Center for Electron Microscopy, Max Planck Institute for Intelligent Systems, Max Planck Society, ou_1497669              

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Free keywords: MPI für Metallforschung; MPI für Festkörperforschung; MPI für Festkörperforschung; Stuttgart Center for Electron Microscopy (StEM); Jansen; Kern;
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Language(s): eng - English
 Dates: 2009-10-27
 Publication Status: Issued
 Pages: -
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 Table of Contents: -
 Rev. Type: Peer
 Identifiers: eDoc: 438378
DOI: 10.1021/cm902145x
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Title: Chemistry of Materials
Source Genre: Journal
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Pages: - Volume / Issue: 21 (20) Sequence Number: - Start / End Page: 4949 - 4954 Identifier: -