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  Highly efficient cw frequency doubling of 854 nm GaAlAs diode lasers in an external ring cavity

Brozek, O. S., Quetschke, V., Wicht, A., & Danzmann, K. (1998). Highly efficient cw frequency doubling of 854 nm GaAlAs diode lasers in an external ring cavity. Optics Communications, 146(1-6), 141-146. doi:10.1016/S0030-4018(97)00492-6.

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Item Permalink: http://hdl.handle.net/11858/00-001M-0000-0013-5980-4 Version Permalink: http://hdl.handle.net/11858/00-001M-0000-0013-5981-2
Genre: Journal Article

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372482.pdf (Any fulltext), 426KB
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 Creators:
Brozek, Oliver Sascha1, Author
Quetschke, V., Author
Wicht, A., Author
Danzmann, Karsten2, Author              
Affiliations:
1External Organizations, escidoc:persistent13              
2Laser Interferometry & Gravitational Wave Astronomy, AEI-Hannover, MPI for Gravitational Physics, Max Planck Society, escidoc:24010              

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 Abstract: We report on 50% conversion efficiency for frequency doubling of a 854 nm GaAlAs diode laser using a potassium niobate crystal in an external ring cavity. Frequency stabilization of the diode laser is achieved by direct optical feedback from the doubling cavity or from a grating in Littrow configuration. We determine 200 kHz linewidth from the measured spectral density of the frequency noise and from a beat signal measurement of two independent diode lasers. The blue output power of 7.8 mW shows rms-fluctuations of less than 0.6% in 1 MHz bandwidth.

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 Dates: 1998-01
 Publication Status: Published in print
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 Identifiers: eDoc: 372482
DOI: 10.1016/S0030-4018(97)00492-6
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Title: Optics Communications
Source Genre: Journal
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Pages: - Volume / Issue: 146 (1-6) Sequence Number: - Start / End Page: 141 - 146 Identifier: ISSN: 0030-4018