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  Ordered structure of FeGe2 formed during solid-phase epitaxy

Jenichen, B., Hanke, M., Gaucher, S., Trampert, A., Herfort, J., Kirmse, H., et al. (2018). Ordered structure of FeGe2 formed during solid-phase epitaxy. Physical Review Materials, 2(5): 051402(R). doi:10.1103/PhysRevMaterials.2.051402.

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PhysRevMaterials.2.051402.pdf (Publisher version), 894KB
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PhysRevMaterials.2.051402.pdf
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2018
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 Creators:
Jenichen, B.1, Author
Hanke, M.1, Author
Gaucher, S.1, Author
Trampert, A.1, Author
Herfort, J.1, Author
Kirmse, H.2, Author
Haas, B.2, Author
Willinger, Elena3, Author           
Huang, Xing3, Author           
Erwin, S. C.4, Author
Affiliations:
1Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5–7, D-10117 Berlin, Germany, ou_persistent22              
2Humboldt-Universität zu Berlin, Institut für Physik, Newtonstraße 15, D-12489 Berlin, Germany, ou_persistent22              
3Inorganic Chemistry, Fritz Haber Institute, Max Planck Society, ou_24023              
4Center for Computational Materials Science, Naval Research Laboratory, Washington, DC 20375, USA, ou_persistent22              

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 Abstract: Fe3Si/Ge(Fe,Si)/Fe3Si thin-film stacks were grown by a combination of molecular beam epitaxy and solid-phase epitaxy (Ge on Fe3Si). The stacks were analyzed using electron microscopy, electron diffraction, and synchrotron x-ray diffraction. The Ge(Fe,Si) films crystallize in the well-oriented, layered tetragonal structure FeGe2 with space group P4mm. This kind of structure does not exist as a bulk material and is stabilized by the solid-phase epitaxy of Ge on Fe3Si. We interpret this as an ordering phenomenon induced by minimization of the elastic energy of the epitaxial film.

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Language(s): eng - English
 Dates: 2018-04-112018-05-21
 Publication Status: Published online
 Pages: 6
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: DOI: 10.1103/PhysRevMaterials.2.051402
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Title: Physical Review Materials
  Abbreviation : Phys. Rev. Mat.
Source Genre: Journal
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Publ. Info: College Park, MD : American Physical Society
Pages: 6 Volume / Issue: 2 (5) Sequence Number: 051402(R) Start / End Page: - Identifier: ISSN: 2475-9953
CoNE: https://pure.mpg.de/cone/journals/resource/2475-9953