Annealing induced void formation in epitaxial Al thin films on sapphire (α-Al2O3
)

Hieke, Stefan Werner; Dehm, Gerhard; Scheu, Christina

doi:10.1016/j.actamat.2017.08.050

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Annealing induced void formation in epitaxial Al thin films on sapphire (α-Al₂O₃)

Hieke, S. W., Dehm, G., & Scheu, C. (2017). Annealing induced void formation in epitaxial Al thin films on sapphire (α-Al₂O₃). Acta Materialia, 140, 355-365. doi:10.1016/j.actamat.2017.08.050.

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Item Permalink: https://hdl.handle.net/21.11116/0000-0000-7341-5 Version Permalink: https://hdl.handle.net/21.11116/0000-0001-6B29-A

Genre: Journal Article

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Creators:
Hieke, Stefan Werner¹, Author
Dehm, Gerhard², Author
Scheu, Christina^{1, 3}, Author

Affiliations:
1Nanoanalytics and Interfaces, Independent Max Planck Research Groups, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_2054294
2Structure and Nano-/ Micromechanics of Materials, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863398
3Materials Analytics, RWTH Aachen University, Kopernikusstrasse 10, Aachen, Germany, ou_persistent22

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Language(s): eng - English

Dates: Published Online: 2017-08-24Date issued: 2017-11

Publication Status: Issued

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Rev. Type: Peer

Identifiers: DOI: 10.1016/j.actamat.2017.08.050

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Title: Acta Materialia

Abbreviation : Acta Mater.

Source Genre: Journal

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Pages: - Volume / Issue: 140 Sequence Number: - Start / End Page: 355 - 365 Identifier: ISSN: 1359-6454
CoNE: https://pure.mpg.de/cone/journals/resource/954928603100