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  Observation and Origin of Extraordinary Atomic Mobility at Metal-Semiconductor Interfaces at Low Temperatures

Wang, Z., Jeurgens, L. P. H., Sigle, W., & Mittemeijer, E. J. (2015). Observation and Origin of Extraordinary Atomic Mobility at Metal-Semiconductor Interfaces at Low Temperatures. Physical Review Letters, 115(1-3): 016102. doi:10.1103/PhysRevLett.115.016102.

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 Creators:
Wang, Zumin1, Author           
Jeurgens, Lars P. H.2, Author
Sigle, Wilfried3, Author           
Mittemeijer, Eric Jan1, 4, Author           
Affiliations:
1Dept. Phase Transformations; Thermodynamics and Kinetics, Max Planck Institute for Intelligent Systems, Max Planck Society, ou_1497644              
2Empa, Swiss Federal Laboratories for Materials Science and Technology, Laboratory for Joining Technologies and Corrosion, Ueberlandstrasse 129, 8600 Duebendorf, Switzerland, ou_persistent22              
3Stuttgart Center for Electron Microscopy, Max Planck Institute for Intelligent Systems, Max Planck Society, ou_1497669              
4Institut für Materialwissenschaft, Universität Stuttgart, Heisenbergstraße 3, 70569 Stuttgart, Germany, ou_persistent22              

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Free keywords: Abt. Mittemeijer
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Language(s): eng - English
 Dates: 2015-07-022015-07
 Publication Status: Issued
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: DOI: 10.1103/PhysRevLett.115.016102
 Degree: -

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Title: Physical Review Letters
  Abbreviation : Phys. Rev. Lett.
Source Genre: Journal
 Creator(s):
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Publ. Info: Woodbury, N.Y. : American Physical Society
Pages: - Volume / Issue: 115 (1-3) Sequence Number: 016102 Start / End Page: - Identifier: ISSN: 0031-9007
CoNE: https://pure.mpg.de/cone/journals/resource/954925433406_1