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  Characterization of neutral boron-silicon clusters using infrared spectroscopy: The case of Si6B

Truong, N. X., Härtelt, M., Jaeger, B. K. A., Gewinner, S., Schöllkopf, W., Fielicke, A., et al. (2016). Characterization of neutral boron-silicon clusters using infrared spectroscopy: The case of Si6B. International Journal of Mass Spectrometry, 395, 1-6. doi:10.1016/j.ijms.2015.11.006.

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Item Permalink: http://hdl.handle.net/11858/00-001M-0000-0029-6015-2 Version Permalink: http://hdl.handle.net/21.11116/0000-0000-02E2-E
Genre: Journal Article

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Si6Brevised.pdf (Any fulltext), 295KB
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2015
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Elsevier
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 Creators:
Truong, Nguyen Xuan1, Author
Härtelt, Marko2, Author              
Jaeger, Bertram K. A.1, Author
Gewinner, Sandy2, Author              
Schöllkopf, Wieland2, Author              
Fielicke, Andre1, Author
Dopfer, Otto1, Author
Affiliations:
1Institut für Optik und Atomare Physik, Technische Universität Berlin, Hardenbergstraße 36, D-10623 Berlin, Germany, escidoc:persistent22              
2Molecular Physics, Fritz Haber Institute, Max Planck Society, escidoc:634545              

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 Abstract: Nano-size clusters are of great interest for understanding of fundamental properties and processes relevant for applied materials science such as heterogeneous catalysis. In this study, we present a newly developed dual-target dual-laser ablation source, suitable for the production of binary clusters and their spectroscopic characterization. With the current design, an almost arbitrary mixing ratio can be achieved by altering different parameters such as the laser fluences. Boron and silicon targets are chosen for cluster production, illustrating the possibility to control the outcome ranging from pure boron over mixed SinBm to pure silicon clusters. As a test system, Si6B clusters are characterized by means of infrared-ultraviolet two-color ionization (IR-UV2CI) spectroscopy, combined with quantum chemical simulations. The most stable structure of Si6B (Cs, 2A′) predicted in our previous work is confirmed by the present experiment. Doping of Si7 with a single B atom has a drastic impact on the geometric, vibrational, and electronic properties.

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Language(s): eng - English
 Dates: 2015-10-092015-11-212015-12-122016-02-05
 Publication Status: Published in print
 Pages: 5
 Publishing info: -
 Table of Contents: -
 Rev. Method: Peer
 Identifiers: DOI: 10.1016/j.ijms.2015.11.006
 Degree: -

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Title: International Journal of Mass Spectrometry
Source Genre: Journal
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Publ. Info: Amsterdam : Elsevier
Pages: 6 Volume / Issue: 395 Sequence Number: - Start / End Page: 1 - 6 Identifier: ISSN: 1387-3806
CoNE: http://pubman.mpdl.mpg.de/cone/journals/resource/954926232412