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  On the impact of indium distribution on the electronic properties in InGaN nanodisks

Benaissa, M., Sigle, W., Ng, T., El Bouayadi, R., van Aken, P. A., Jahangir, S., et al. (2015). On the impact of indium distribution on the electronic properties in InGaN nanodisks. Applied Physics Letters, 106: 101910. doi:10.1063/1.4915117.

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 Creators:
Benaissa, Mohammed1, Author
Sigle, Wilfried2, Author           
Ng, T.K.3, Author
El Bouayadi, R.4, Author
van Aken, Peter Antonie2, Author           
Jahangir, S5, Author
Bhattacharya, P5, Author
Ooi, B.S.3, Author
Affiliations:
1LMPHE, University Mohammed V, Rabat, Morocco, ou_persistent22              
2Stuttgart Center for Electron Microscopy, Max Planck Institute for Intelligent Systems, Max Planck Society, ou_1497669              
3Photonics Laboratory, King Abdullah University of Science and Technology, Thuwal, Saudi Arabia, ou_persistent22              
4LPMR, University Mohammed Premier,Oujda, Morocco, ou_persistent22              
5Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan, USA, ou_persistent22              

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Free keywords: StEM
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Language(s): eng - English
 Dates: 2015-03-122015
 Publication Status: Issued
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: DOI: 10.1063/1.4915117
 Degree: -

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Title: Applied Physics Letters
  Abbreviation : Appl. Phys. Lett.
Source Genre: Journal
 Creator(s):
Affiliations:
Publ. Info: Melville, NY : American Institute of Physics
Pages: 4 Volume / Issue: 106 Sequence Number: 101910 Start / End Page: - Identifier: Other: 0003-6951
CoNE: https://pure.mpg.de/cone/journals/resource/954922836223