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  Topological insulators

Felser, C., & Qi, X.-L. (2014). Topological insulators. MRS Bulletin, 39(10), 843-848. doi:10.1557/mrs.2014.217.

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 Urheber:
Felser, Claudia1, Autor           
Qi, Xiao-Liang2, Autor
Affiliations:
1Claudia Felser, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863429              
2External Organizations, ou_persistent22              

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 Zusammenfassung: It is well established that symmetry has an important influence on the properties of materials, but the topology of electronic states might be an even more fundamental property. Topological insulators (TIs) are new states of matter based on the topology in the electronic band structure. Relativistic effects are the origin of the topologically non-trivial electronic structure, and the new state of matter has been realized in two-dimensional quantum well structures and three-dimensional bulk crystals of heavy elements and compounds. TI materials have an insulating gap in the bulk, and robust metallic edge/surface states on the boundary, which is robust against disorder and leads to unique spin and charge transport properties. Examples of TIs include HgTe/CdTe quantum wells, Bi-Sb-alloys, Bi2Se3, and half-Heusler compounds.

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Sprache(n): eng - English
 Datum: 2014-10-15
 Publikationsstatus: Erschienen
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 Ort, Verlag, Ausgabe: -
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 Art der Begutachtung: -
 Identifikatoren: ISI: 000344049700008
DOI: 10.1557/mrs.2014.217
 Art des Abschluß: -

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Titel: MRS Bulletin
  Kurztitel : MRS Bull.
Genre der Quelle: Zeitschrift
 Urheber:
Affiliations:
Ort, Verlag, Ausgabe: Pittsburgh, PA : The Society
Seiten: - Band / Heft: 39 (10) Artikelnummer: - Start- / Endseite: 843 - 848 Identifikator: ISSN: 0883-7694
CoNE: https://pure.mpg.de/cone/journals/resource/954925549328