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  Crystal growth and anisotropic resistivity of Bi2Sr2-xLaxCuOy

Wang, N. L., Buschinger, B., Geibel, C., & Steglich, F. (1996). Crystal growth and anisotropic resistivity of Bi2Sr2-xLaxCuOy. Physical Review B, 54(10), 7449-7454. doi:10.1103/PhysRevB.54.7449.

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Wang, N. L.1, Author
Buschinger, B.1, Author
Geibel, C.1, Author
Steglich, F.2, Author           
Affiliations:
1external, ou_persistent22              
2External Organizations, ou_persistent22              

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 Abstract: A number of Bi2Sr2-xLaxCuOy crystals with different doping levels in the phase diagram have been grown and characterized by x-ray-diffraction measurements. The anisotropic resistivity was measured using a generalization of the Montgomery method and was found to change in a systematic way. Our analysis indicates that for all the samples the in-plane transport is on the metallic side of the Ioffe-Regel criterion, but the out-of-plane transport is deeply on the insulating side of the Mott limit. The temperature dependence of c-axis resistivity rho(c)(T) can be well understood from the incoherent hopping model proposed by Levin and co-workers. The evolution of rho(c)(T) with reduction in doping level is related to the reducing of both the impurity- and boson-assisted hopping processes.

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 Dates: 1996-09-01
 Publication Status: Issued
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 Table of Contents: -
 Rev. Type: -
 Identifiers: ISI: A1996VH08200090
DOI: 10.1103/PhysRevB.54.7449
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Title: Physical Review B
  Other : Phys. Rev. B
Source Genre: Journal
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Publ. Info: Woodbury, NY : American Physical Society
Pages: - Volume / Issue: 54 (10) Sequence Number: - Start / End Page: 7449 - 7454 Identifier: ISSN: 1098-0121
CoNE: https://pure.mpg.de/cone/journals/resource/954925225008