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  C-axis resistivities of single- and double-layered Bi-system cuprates: A comparative study

Wang, N. L., Geibel, C., & Steglich, F. (1996). C-axis resistivities of single- and double-layered Bi-system cuprates: A comparative study. Journal of Low Temperature Physics, 105(3-4), 951-956. doi:10.1007/BF00768505.

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Wang, N. L.1, Author
Geibel, C.1, Author
Steglich, F.2, Author           
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1external, ou_persistent22              
2External Organizations, ou_persistent22              

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 Abstract: The measurements of anisotropic resistivities of single- and double-layered Bi-system cuprates at different doping levels are presented. The two types of materials exhibit qualitatively common features in both doping and temperature dependences of their c-axis resistivities, The c-axis conduction is incoherent in nature because the rho(c) data are deeply on the insulating side of the Mott limit, even though positive slopes (d rho(c)/dT>0) are observed below room temperature for overdoped samples. Some differences are revealed by quantifying the trend of rho(c)(T) data, which may reflect differences in the charge excitation spectra.

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 Dates: 1996-11-01
 Publication Status: Issued
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 Identifiers: ISI: A1996VX65200106
DOI: 10.1007/BF00768505
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Title: Journal of Low Temperature Physics
Source Genre: Journal
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Publ. Info: New York : Plenum Press.
Pages: - Volume / Issue: 105 (3-4) Sequence Number: - Start / End Page: 951 - 956 Identifier: ISSN: 0022-2291
CoNE: https://pure.mpg.de/cone/journals/resource/954925414929