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  Indium-Gallium Segregation in CuInxGa1-xSe2: An Ab Initio-Based Monte Carlo Study

Ludwig, C. D. R., Gruhn, T., Felser, C., Schilling, T., Windeln, J., & Kratzer, P. (2010). Indium-Gallium Segregation in CuInxGa1-xSe2: An Ab Initio-Based Monte Carlo Study. Physical Review Letters, 105(2): 025702, pp. 1-4. doi:10.1103/PhysRevLett.105.025702.

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Ludwig, Christian D. R.1, Author
Gruhn, Thomas1, Author
Felser, Claudia2, Author           
Schilling, Tanja1, Author
Windeln, Johannes1, Author
Kratzer, Peter1, Author
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1external, ou_persistent22              
2External Organizations, ou_persistent22              

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 Abstract: Thin-film solar cells with CuInxGa1-xSe2 (CIGS) absorber are still far below their efficiency limit, although lab cells already reach 20.1%. One important aspect is the homogeneity of the alloy. Large-scale simulations combining Monte Carlo and density functional calculations show that two phases coexist in thermal equilibrium below room temperature. Only at higher temperatures, CIGS becomes more and more a homogeneous alloy. A larger degree of inhomogeneity for Ga-rich CIGS persists over a wide temperature range, which contributes to the observed low efficiency of Ga-rich CIGS solar cells.

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 Dates: 2010-07-09
 Publication Status: Issued
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Title: Physical Review Letters
  Other : Phys. Rev. Lett.
Source Genre: Journal
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Publ. Info: Woodbury, N.Y. : American Physical Society
Pages: - Volume / Issue: 105 (2) Sequence Number: 025702 Start / End Page: 1 - 4 Identifier: ISSN: 0031-9007
CoNE: https://pure.mpg.de/cone/journals/resource/954925433406_1