Crystal Structure Refinement and Electronic Properties of Si(cI16)

Wosylus, A.; Rosner, H.; Schnelle, W.; Schwarz, U.

doi:10.1002/zaac.200900051

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Crystal Structure Refinement and Electronic Properties of Si(cI16)

Wosylus, A., Rosner, H., Schnelle, W., & Schwarz, U. (2009). Crystal Structure Refinement and Electronic Properties of Si(cI16). Zeitschrift für Anorganische und Allgemeine Chemie, 635(4-5), 700-703. doi:10.1002/zaac.200900051.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0015-25E8-A Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0019-0BA9-0

Genre: Journal Article

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Creators:
Wosylus, A.¹, Author
Rosner, H.², Author
Schnelle, W.³, Author
Schwarz, U.⁴, Author

Affiliations:
1Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863404
2Helge Rosner, Physics of Correlated Matter, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863450
3Walter Schnelle, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863441
4Ulrich Schwarz, Chemical Metal Science, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863423

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Language(s): eng - English

Dates: Date issued: 2009

Publication Status: Issued

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Identifiers: eDoc: 431922
DOI: 10.1002/zaac.200900051

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Title: Zeitschrift für Anorganische und Allgemeine Chemie

Source Genre: Journal

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Pages: - Volume / Issue: 635 (4-5) Sequence Number: - Start / End Page: 700 - 703 Identifier: -