Single Crystal Growth of the CeCu2Si2 Intermetallic Compound by a Vertical 
Floating Zone Method

Cao, C.; Deppe, M.; Behr, G.; Löser, W.; Wizent, N.; Kataeva, O.; Büchner, B.

doi:10.1021/cg101128w

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Single Crystal Growth of the CeCu₂Si₂ Intermetallic Compound by a Vertical Floating Zone Method

Cao, C., Deppe, M., Behr, G., Löser, W., Wizent, N., Kataeva, O., et al. (2011). Single Crystal Growth of the CeCu₂Si₂ Intermetallic Compound by a Vertical Floating Zone Method. Crystal Growth & Design, 11(2), 431-435. doi:10.1021/cg101128w.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0015-21B2-6 Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0015-21B3-4

Genre: Journal Article

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Creators:
Cao, C., Author
Deppe, M.¹, Author
Behr, G., Author
Löser, W., Author
Wizent, N., Author
Kataeva, O., Author
Büchner, B., Author

Affiliations:
1Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863404

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Language(s): eng - English

Dates: Date issued: 2011-11-01

Publication Status: Issued

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Identifiers: eDoc: 535239
DOI: 10.1021/cg101128w

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Title: Crystal Growth & Design

Source Genre: Journal

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Pages: - Volume / Issue: 11 (2) Sequence Number: - Start / End Page: 431 - 435 Identifier: -