Characterization of Junction Gate Field-Effect Transistors at Room Temperature 
and 77K

Geist, Jeschua

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Characterization of Junction Gate Field-Effect Transistors at Room Temperature and 77K

Geist, J. (2011). Characterization of Junction Gate Field-Effect Transistors at Room Temperature and 77K. Bachelor Thesis, Ruprecht-Karls-Universität, Heidelberg.

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Item Permalink: https://hdl.handle.net/11858/00-001M-0000-0014-6734-A Version Permalink: https://hdl.handle.net/11858/00-001M-0000-0014-6735-8

Genre: Thesis

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Creators:
Geist, Jeschua¹, Author

Affiliations:
1Division Prof. Dr. Werner Hofmann, MPI for Nuclear Physics, Max Planck Society, ou_904550

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Dates: Accepted: 2011

Publication Status: Accepted / In Press

Pages: 35, XVII S.

Publishing info: Heidelberg : Ruprecht-Karls-Universität

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Degree: Bachelor

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